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MAT03EHZ

Part Number: MAT03EHZ
SKU: 284750
Manufacturer: Analog Devices
Description: Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 1797 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Analog Devices Inc.
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style Through Hole
Package Shape TO-78-6
Transistor Polarity PNP
Configuration Dual
Collector- Emitter Voltage VCEO Max 36 V
Collector- Base Voltage VCBO 36 V
Collector-Emitter Saturation Voltage 100 mV
Maximum DC Collector Current 20 mA
Gain Bandwidth Product fT 190 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 125 C
Series MAT03
Package Style Bulk
Brand Analog Devices
DC Collector/Base Gain hfe Min 80 at 10 uA, 36 V
Height 4.7 mm
Length 9.4 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 100
Product Group Transistors
Material Silicon
CNHTS 8542319090
CAHTS 8541210000
JPHTS 854239099
TARIC 8542399000
MXHTS 8542399901
ECCN EAR99
Width 9.4 mm
USHTS 8541210095
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  • MAT03EHZ Bipolar Transistors - BJT
  • MAT03EHZ Analog Devices
Products specifications
Manufacturer(MFG) Analog Devices Inc.
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style Through Hole
Package Shape TO-78-6
Transistor Polarity PNP
Configuration Dual
Collector- Emitter Voltage VCEO Max 36 V
Collector- Base Voltage VCBO 36 V
Collector-Emitter Saturation Voltage 100 mV
Maximum DC Collector Current 20 mA
Gain Bandwidth Product fT 190 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 125 C
Series MAT03
Package Style Bulk
Brand Analog Devices
DC Collector/Base Gain hfe Min 80 at 10 uA, 36 V
Height 4.7 mm
Length 9.4 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 100
Product Group Transistors
Material Silicon
CNHTS 8542319090
CAHTS 8541210000
JPHTS 854239099
TARIC 8542399000
MXHTS 8542399901
ECCN EAR99
Width 9.4 mm
USHTS 8541210095
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