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ams
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NE651R479A-T1
NE651R479A-T1
Part Number:
NE651R479A-T1
SKU:
54495
Description:
RF JFET Transistors
Rohs State:
Need to verify
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Availability:
30900 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
NEC
Part Category
RF JFET Transistors
Transistor Type
HFET
Technology
GaAs
Operating Frequency
1.9 GHz
Gain
12 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
8 V
Vgs - Gate-Source Breakdown Voltage
- 4 V
Id - Continuous Drain Current
1 A
Operating Temperature(Max)
+ 125 C
Power Dissipation
2.5 W
Mounting Type Style
SMD/SMT
Package/Case
79A
Brand
NEC/CEL
P1dB - Compression Point
27 dBm
Product
RF JFET
Product Type
RF JFET Transistors
Product Group
Transistors
Type
GaAs HFET
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NE651R479A-T1
RF JFET Transistors
Products specifications
Manufacturer(MFG)
NEC
Part Category
RF JFET Transistors
Transistor Type
HFET
Technology
GaAs
Operating Frequency
1.9 GHz
Gain
12 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
8 V
Vgs - Gate-Source Breakdown Voltage
- 4 V
Id - Continuous Drain Current
1 A
Operating Temperature(Max)
+ 125 C
Power Dissipation
2.5 W
Mounting Type Style
SMD/SMT
Package/Case
79A
Brand
NEC/CEL
P1dB - Compression Point
27 dBm
Product
RF JFET
Product Type
RF JFET Transistors
Product Group
Transistors
Type
GaAs HFET
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