ATF-54143-TR1G

Part Number: ATF-54143-TR1G

SKU: 30570

Manufacturer: Broadcom / Avago

Description: RF JFET Transistors Transistor GaAs Single Voltage

Rohs State: Need to verify

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Availability: 2167 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Broadcom Limited
Part Category	RF JFET Transistors
RoHS	RoHS Compliance
Transistor Type	EpHEMT
Technology	GaAs
Operating Frequency	2 GHz
Gain	16.6 dB
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	5 V
Vgs - Gate-Source Breakdown Voltage	- 5 V to 1 V
Id - Continuous Drain Current	120 mA
Operating Temperature(Max)	+ 150 C
Power Dissipation	725 mW
Mounting Type Style	SMD/SMT
Package Shape	SOT-343
Package Style	Reel
Brand	Broadcom / Avago
Configuration	Single Dual Source
Forward Transconductance - Min	410 mmho
NF - Noise Figure	0.5 dB
P1dB - Compression Point	20.4 dBm
Product	RF JFET
Product Type	RF JFET Transistors
Standard Pack Quantity	3000
Product Group	Transistors
CNHTS	8541210000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Type	GaAs EpHEMT
USHTS	8541210075

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Products specifications

Manufacturer(MFG)	Broadcom Limited
Part Category	RF JFET Transistors
RoHS	RoHS Compliance
Transistor Type	EpHEMT
Technology	GaAs
Operating Frequency	2 GHz
Gain	16.6 dB
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	5 V
Vgs - Gate-Source Breakdown Voltage	- 5 V to 1 V
Id - Continuous Drain Current	120 mA
Operating Temperature(Max)	+ 150 C
Power Dissipation	725 mW
Mounting Type Style	SMD/SMT
Package Shape	SOT-343
Package Style	Reel
Brand	Broadcom / Avago
Configuration	Single Dual Source
Forward Transconductance - Min	410 mmho
NF - Noise Figure	0.5 dB
P1dB - Compression Point	20.4 dBm
Product	RF JFET
Product Type	RF JFET Transistors
Standard Pack Quantity	3000
Product Group	Transistors
CNHTS	8541210000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Type	GaAs EpHEMT
USHTS	8541210075

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