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Part Number: VMMK-1218-TR1G
SKU: 324661
Manufacturer: Broadcom / Avago
Description: RF JFET Transistors LNA FET in Microcap DC-18GHz
Rohs State: Need to verify
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Availability: 87278 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Broadcom Limited
Part Category RF JFET Transistors
RoHS RoHS Compliance
Transistor Type EpHEMT
Technology GaAs
Operating Frequency 10 GHz
Gain 9 dB
Vds - Drain-Source Breakdown Voltage 5 V
Vgs - Gate-Source Breakdown Voltage - 5 V to 1 V
Id - Continuous Drain Current 100 mA
Operating Temperature(Max) + 150 C
Power Dissipation 300 mW
Mounting Type Style SMD/SMT
Package Style Reel
Brand Broadcom / Avago
Configuration Single
Forward Transconductance - Min 200 mS
NF - Noise Figure 0.81 dB
P1dB - Compression Point 12 dBm
Product RF JFET
Product Type RF JFET Transistors
Standard Pack Quantity 5000
Product Group Transistors
CNHTS 8542319090
USHTS 8542330001
JPHTS 8542330996
MXHTS 8542330299
ECCN EAR99
Type GaAs EpHEMT
TARIC 8542330000
Products specifications
Manufacturer(MFG) Broadcom Limited
Part Category RF JFET Transistors
RoHS RoHS Compliance
Transistor Type EpHEMT
Technology GaAs
Operating Frequency 10 GHz
Gain 9 dB
Vds - Drain-Source Breakdown Voltage 5 V
Vgs - Gate-Source Breakdown Voltage - 5 V to 1 V
Id - Continuous Drain Current 100 mA
Operating Temperature(Max) + 150 C
Power Dissipation 300 mW
Mounting Type Style SMD/SMT
Package Style Reel
Brand Broadcom / Avago
Configuration Single
Forward Transconductance - Min 200 mS
NF - Noise Figure 0.81 dB
P1dB - Compression Point 12 dBm
Product RF JFET
Product Type RF JFET Transistors
Standard Pack Quantity 5000
Product Group Transistors
CNHTS 8542319090
USHTS 8542330001
JPHTS 8542330996
MXHTS 8542330299
ECCN EAR99
Type GaAs EpHEMT
TARIC 8542330000
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