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ams
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RF JFET Transistors
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NE350184C
NE350184C
Part Number:
NE350184C
SKU:
115297
Manufacturer:
CEL
Description:
RF JFET Transistors Low Noise HJ FET
Rohs State:
Need to verify
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Availability:
3537 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
CEL
Part Category
RF JFET Transistors
RoHS
RoHS Compliance
Transistor Type
HFET
Technology
GaAs
Operating Frequency
20 GHz
Gain
13.5 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
4 V
Vgs - Gate-Source Breakdown Voltage
- 3 V
Id - Continuous Drain Current
70 mA
Operating Temperature(Max)
+ 150 C
Power Dissipation
165 mW
Mounting Type Style
SMD/SMT
Package Shape
Micro-X
Package Style
Bulk
Brand
CEL
Forward Transconductance - Min
40 mS
Gate-Source Cutoff Voltage
- 2 V
NF - Noise Figure
0.7 dB
Product
RF JFET
Product Type
RF JFET Transistors
Standard Pack Quantity
30
Product Group
Transistors
CNHTS
8541210000
CAHTS
8541210000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Type
GaAs HFET
USHTS
8541210095
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RF JFET Transistors
NE350184C
CEL
Products specifications
Manufacturer(MFG)
CEL
Part Category
RF JFET Transistors
RoHS
RoHS Compliance
Transistor Type
HFET
Technology
GaAs
Operating Frequency
20 GHz
Gain
13.5 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
4 V
Vgs - Gate-Source Breakdown Voltage
- 3 V
Id - Continuous Drain Current
70 mA
Operating Temperature(Max)
+ 150 C
Power Dissipation
165 mW
Mounting Type Style
SMD/SMT
Package Shape
Micro-X
Package Style
Bulk
Brand
CEL
Forward Transconductance - Min
40 mS
Gate-Source Cutoff Voltage
- 2 V
NF - Noise Figure
0.7 dB
Product
RF JFET
Product Type
RF JFET Transistors
Standard Pack Quantity
30
Product Group
Transistors
CNHTS
8541210000
CAHTS
8541210000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Type
GaAs HFET
USHTS
8541210095
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