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ams
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RF JFET Transistors
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NE3508M04-T2-A
NE3508M04-T2-A
Part Number:
NE3508M04-T2-A
SKU:
341736
Manufacturer:
CEL
Description:
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
Rohs State:
Need to verify
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Availability:
12191 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
CEL
Part Category
RF JFET Transistors
RoHS
RoHS Compliance
Transistor Type
HFET
Technology
GaAs
Operating Frequency
2 GHz
Gain
14 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
4 V
Vgs - Gate-Source Breakdown Voltage
- 3 V
Id - Continuous Drain Current
120 mA
Operating Temperature(Max)
+ 150 C
Power Dissipation
175 mW
Mounting Type Style
SMD/SMT
Package Shape
FTSMM-4 (M04)
Package Style
Reel
Brand
CEL
Forward Transconductance - Min
100 mS
NF - Noise Figure
0.45 dB
P1dB - Compression Point
18 dBm
Product
RF JFET
Product Type
RF JFET Transistors
Standard Pack Quantity
3000
Product Group
Transistors
CNHTS
8541210000
CAHTS
8541210000
JPHTS
8541210101
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Type
GaAs HFET
USHTS
8541210095
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RF JFET Transistors
NE3508M04-T2-A
CEL
Products specifications
Manufacturer(MFG)
CEL
Part Category
RF JFET Transistors
RoHS
RoHS Compliance
Transistor Type
HFET
Technology
GaAs
Operating Frequency
2 GHz
Gain
14 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
4 V
Vgs - Gate-Source Breakdown Voltage
- 3 V
Id - Continuous Drain Current
120 mA
Operating Temperature(Max)
+ 150 C
Power Dissipation
175 mW
Mounting Type Style
SMD/SMT
Package Shape
FTSMM-4 (M04)
Package Style
Reel
Brand
CEL
Forward Transconductance - Min
100 mS
NF - Noise Figure
0.45 dB
P1dB - Compression Point
18 dBm
Product
RF JFET
Product Type
RF JFET Transistors
Standard Pack Quantity
3000
Product Group
Transistors
CNHTS
8541210000
CAHTS
8541210000
JPHTS
8541210101
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Type
GaAs HFET
USHTS
8541210095
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