NE3514S02-T1C-A

Part Number: NE3514S02-T1C-A

SKU: 95228

Manufacturer: CEL

Description: RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET

Rohs State: Need to verify

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Availability: 96954 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	CEL
Part Category	RF JFET Transistors
RoHS	RoHS Compliance
Transistor Type	pHEMT
Technology	GaAs
Operating Frequency	20 GHz
Gain	10 dB
Vds - Drain-Source Breakdown Voltage	4 V
Vgs - Gate-Source Breakdown Voltage	- 3 V
Id - Continuous Drain Current	70 mA
Operating Temperature(Max)	+ 125 C
Power Dissipation	165 mW
Mounting Type Style	SMD/SMT
Package Shape	S0-2
Package Style	Reel
Brand	CEL
Forward Transconductance - Min	55 mS
NF - Noise Figure	0.75 dB
Product	RF JFET
Product Type	RF JFET Transistors
Standard Pack Quantity	2000
Product Group	Transistors
CNHTS	8541210000
CAHTS	8541210000
JPHTS	8541210101
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Type	GaAs pHEMT
USHTS	8541210095

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Products specifications

Manufacturer(MFG)	CEL
Part Category	RF JFET Transistors
RoHS	RoHS Compliance
Transistor Type	pHEMT
Technology	GaAs
Operating Frequency	20 GHz
Gain	10 dB
Vds - Drain-Source Breakdown Voltage	4 V
Vgs - Gate-Source Breakdown Voltage	- 3 V
Id - Continuous Drain Current	70 mA
Operating Temperature(Max)	+ 125 C
Power Dissipation	165 mW
Mounting Type Style	SMD/SMT
Package Shape	S0-2
Package Style	Reel
Brand	CEL
Forward Transconductance - Min	55 mS
NF - Noise Figure	0.75 dB
Product	RF JFET
Product Type	RF JFET Transistors
Standard Pack Quantity	2000
Product Group	Transistors
CNHTS	8541210000
CAHTS	8541210000
JPHTS	8541210101
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Type	GaAs pHEMT
USHTS	8541210095

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