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ams
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RF JFET Transistors
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NE3515S02-T1C-A
NE3515S02-T1C-A
Part Number:
NE3515S02-T1C-A
SKU:
155714
Manufacturer:
CEL
Description:
RF JFET Transistors Super Low Noise Pseudomorphic
Rohs State:
Need to verify
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Availability:
37356 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
CEL
Part Category
RF JFET Transistors
RoHS
RoHS Compliance
Transistor Type
pHEMT
Technology
GaAs
Operating Frequency
12 GHz
Gain
12.5 dB
Vds - Drain-Source Breakdown Voltage
4 V
Vgs - Gate-Source Breakdown Voltage
- 3 V
Id - Continuous Drain Current
88 mA
Operating Temperature(Max)
+ 125 C
Power Dissipation
165 mW
Mounting Type Style
SMD/SMT
Package Shape
S0-2
Package Style
Reel
Brand
CEL
Forward Transconductance - Min
70 mS
NF - Noise Figure
0.3 dB
P1dB - Compression Point
14 dBm
Product
RF JFET
Product Type
RF JFET Transistors
Standard Pack Quantity
2000
Product Group
Transistors
CNHTS
8541210000
CAHTS
8541210000
JPHTS
8541210101
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Type
GaAs pHEMT
USHTS
8541210095
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NE3515S02-T1C-A
RF JFET Transistors
NE3515S02-T1C-A
CEL
Products specifications
Manufacturer(MFG)
CEL
Part Category
RF JFET Transistors
RoHS
RoHS Compliance
Transistor Type
pHEMT
Technology
GaAs
Operating Frequency
12 GHz
Gain
12.5 dB
Vds - Drain-Source Breakdown Voltage
4 V
Vgs - Gate-Source Breakdown Voltage
- 3 V
Id - Continuous Drain Current
88 mA
Operating Temperature(Max)
+ 125 C
Power Dissipation
165 mW
Mounting Type Style
SMD/SMT
Package Shape
S0-2
Package Style
Reel
Brand
CEL
Forward Transconductance - Min
70 mS
NF - Noise Figure
0.3 dB
P1dB - Compression Point
14 dBm
Product
RF JFET
Product Type
RF JFET Transistors
Standard Pack Quantity
2000
Product Group
Transistors
CNHTS
8541210000
CAHTS
8541210000
JPHTS
8541210101
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Type
GaAs pHEMT
USHTS
8541210095
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