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Part Number: NE3515S02-T1C-A
SKU: 155714
Manufacturer: CEL
Description: RF JFET Transistors Super Low Noise Pseudomorphic
Rohs State: Need to verify
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Availability: 37356 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) CEL
Part Category RF JFET Transistors
RoHS RoHS Compliance
Transistor Type pHEMT
Technology GaAs
Operating Frequency 12 GHz
Gain 12.5 dB
Vds - Drain-Source Breakdown Voltage 4 V
Vgs - Gate-Source Breakdown Voltage - 3 V
Id - Continuous Drain Current 88 mA
Operating Temperature(Max) + 125 C
Power Dissipation 165 mW
Mounting Type Style SMD/SMT
Package Shape S0-2
Package Style Reel
Brand CEL
Forward Transconductance - Min 70 mS
NF - Noise Figure 0.3 dB
P1dB - Compression Point 14 dBm
Product RF JFET
Product Type RF JFET Transistors
Standard Pack Quantity 2000
Product Group Transistors
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Type GaAs pHEMT
USHTS 8541210095
Products specifications
Manufacturer(MFG) CEL
Part Category RF JFET Transistors
RoHS RoHS Compliance
Transistor Type pHEMT
Technology GaAs
Operating Frequency 12 GHz
Gain 12.5 dB
Vds - Drain-Source Breakdown Voltage 4 V
Vgs - Gate-Source Breakdown Voltage - 3 V
Id - Continuous Drain Current 88 mA
Operating Temperature(Max) + 125 C
Power Dissipation 165 mW
Mounting Type Style SMD/SMT
Package Shape S0-2
Package Style Reel
Brand CEL
Forward Transconductance - Min 70 mS
NF - Noise Figure 0.3 dB
P1dB - Compression Point 14 dBm
Product RF JFET
Product Type RF JFET Transistors
Standard Pack Quantity 2000
Product Group Transistors
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Type GaAs pHEMT
USHTS 8541210095
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