US Dollar
Euro
Register
Log in
Wishlist
0
Shopping cart
0
0
You have no items in your shopping cart.
Menu
Search
Personal menu
Wishlist
0
Shopping cart
0
Close
Home Page
Products
Passive Components
Optoelectronics
Connectors
Wire & Cable
Power
Circuit Protection
Tools & Supplies
Semiconductors
Opto-electronics
Electromechanical
Enclosures
Embedded Solutions
Thermal Management
Sensors
Test & Measurement
Manufacturers
3M
Adesto Technologies
Alpha Wire
Amphenol
Amphenol Advanced Sensors
Amphenol Commercial Products
Amphenol FCI
ams
Anaren
Antenova
Apex Microtechnology
Artesyn Embedded Technologies
Contact Us
About Us
Menu
Home Page
Products
Close
Back
Passive Components
Optoelectronics
Connectors
Wire & Cable
Power
Circuit Protection
Tools & Supplies
Semiconductors
Opto-electronics
Electromechanical
Enclosures
Embedded Solutions
Thermal Management
Sensors
Test & Measurement
Manufacturers
Close
Back
3M
Adesto Technologies
Alpha Wire
Amphenol
Amphenol Advanced Sensors
Amphenol Commercial Products
Amphenol FCI
ams
Anaren
Antenova
Apex Microtechnology
Artesyn Embedded Technologies
View All
Contact Us
About Us
Home
/
Semiconductors
/
Discrete Semiconductors
/
Transistors
/
RF Transistors
/
RF JFET Transistors
/
NE651R479A-T1-A
NE651R479A-T1-A
Part Number:
NE651R479A-T1-A
SKU:
155715
Manufacturer:
CEL
Description:
RF JFET Transistors L&S Band GaAs HJFET
Rohs State:
Need to verify
Free Sample Request:
Request Free Samples
Request For NE651R479A-T1-A
Please log in to request free sample.
Availability:
19835 in stock
Delivery Date:
4-7 days
Call for pricing
Share
facebook
twitter
pinterest
google+
Specifications
Contact Us
Products specifications
Manufacturer(MFG)
CEL
Part Category
RF JFET Transistors
RoHS
RoHS Compliance
Transistor Type
HFET
Technology
GaAs
Operating Frequency
1.9 GHz
Gain
12 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
8 V
Vgs - Gate-Source Breakdown Voltage
- 4 V
Id - Continuous Drain Current
1 A
Output Power
30 dBm
Operating Temperature(Max)
+ 125 C
Power Dissipation
2.5 W
Mounting Type Style
SMD/SMT
Package Shape
79A
Package Style
Reel
Brand
CEL
P1dB - Compression Point
27 dBm
Product
RF JFET
Product Type
RF JFET Transistors
Standard Pack Quantity
1000
Product Group
Transistors
CNHTS
8541290000
CAHTS
8541290000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Type
GaAs HFET
USHTS
8541290095
Your name
Your email
Enquiry
Product Related Search
NE651R479A-T1-A
Price
NE65 Series
NE651R479A-T1-A
Datasheet
NE651R479A-T1-A
Application
NE651R479A-T1-A
Pdf
NE651R479A-T1-A
Pinout
NE651R479A-T1-A
Image
NE651R479A-T1-A
Picture
NE651R479A-T1-A
In Stock
NE651R479A-T1-A
Distributor
NE651R479A-T1-A
RF JFET Transistors
NE651R479A-T1-A
CEL
Products specifications
Manufacturer(MFG)
CEL
Part Category
RF JFET Transistors
RoHS
RoHS Compliance
Transistor Type
HFET
Technology
GaAs
Operating Frequency
1.9 GHz
Gain
12 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
8 V
Vgs - Gate-Source Breakdown Voltage
- 4 V
Id - Continuous Drain Current
1 A
Output Power
30 dBm
Operating Temperature(Max)
+ 125 C
Power Dissipation
2.5 W
Mounting Type Style
SMD/SMT
Package Shape
79A
Package Style
Reel
Brand
CEL
P1dB - Compression Point
27 dBm
Product
RF JFET
Product Type
RF JFET Transistors
Standard Pack Quantity
1000
Product Group
Transistors
CNHTS
8541290000
CAHTS
8541290000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Type
GaAs HFET
USHTS
8541290095
Filters
Sort
display