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ams
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RF JFET Transistors
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NE722S01-T1
NE722S01-T1
Part Number:
NE722S01-T1
SKU:
155716
Manufacturer:
CEL
Description:
RF JFET Transistors C-X Band GaAs MESFET
Rohs State:
Need to verify
Free Sample Request:
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Availability:
31604 in stock
Delivery Date:
4-7 days
Call for pricing
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Specifications
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Products specifications
Manufacturer(MFG)
CEL
Part Category
RF JFET Transistors
RoHS
RoHS Compliance
Transistor Type
MESFET
Technology
GaAs
Operating Frequency
4 GHz
Gain
12 dB
Vds - Drain-Source Breakdown Voltage
5 V
Vgs - Gate-Source Breakdown Voltage
- 5 V
Id - Continuous Drain Current
120 mA
Operating Temperature(Max)
+ 125 C
Power Dissipation
250 mW
Mounting Type Style
SMD/SMT
Package Shape
SO-1
Package Style
Reel
Brand
CEL
Forward Transconductance - Min
45 mS
NF - Noise Figure
0.9 dB
P1dB - Compression Point
15 dBm
Product
RF JFET
Product Type
RF JFET Transistors
Standard Pack Quantity
1000
Product Group
Transistors
CNHTS
8541210000
CAHTS
8541210000
TARIC
8541210000
ECCN
EAR99
Type
GaAs MESFET
USHTS
8541210095
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RF JFET Transistors
NE722S01-T1
CEL
Products specifications
Manufacturer(MFG)
CEL
Part Category
RF JFET Transistors
RoHS
RoHS Compliance
Transistor Type
MESFET
Technology
GaAs
Operating Frequency
4 GHz
Gain
12 dB
Vds - Drain-Source Breakdown Voltage
5 V
Vgs - Gate-Source Breakdown Voltage
- 5 V
Id - Continuous Drain Current
120 mA
Operating Temperature(Max)
+ 125 C
Power Dissipation
250 mW
Mounting Type Style
SMD/SMT
Package Shape
SO-1
Package Style
Reel
Brand
CEL
Forward Transconductance - Min
45 mS
NF - Noise Figure
0.9 dB
P1dB - Compression Point
15 dBm
Product
RF JFET
Product Type
RF JFET Transistors
Standard Pack Quantity
1000
Product Group
Transistors
CNHTS
8541210000
CAHTS
8541210000
TARIC
8541210000
ECCN
EAR99
Type
GaAs MESFET
USHTS
8541210095
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