NE722S01-T1B

Part Number: NE722S01-T1B

SKU: 185699

Manufacturer: CEL

Description: RF JFET Transistors C-X Band GaAs MESFET

Rohs State: Need to verify

Data Sheet: Download Datasheets

Free Sample Request: Request Free Samples

Availability: 35532 in stock

Delivery Date: 4-7 days

Call for pricing

Products specifications

Manufacturer(MFG)	CEL
Part Category	RF JFET Transistors
RoHS	RoHS Compliance
Transistor Type	MESFET
Technology	GaAs
Operating Frequency	4 GHz
Gain	12 dB
Vds - Drain-Source Breakdown Voltage	5 V
Vgs - Gate-Source Breakdown Voltage	- 5 V
Id - Continuous Drain Current	120 mA
Operating Temperature(Max)	+ 125 C
Power Dissipation	250 mW
Mounting Type Style	SMD/SMT
Package Shape	SO-1
Package Style	Reel
Brand	CEL
Forward Transconductance - Min	45 mS
NF - Noise Figure	0.9 dB
P1dB - Compression Point	15 dBm
Product	RF JFET
Product Type	RF JFET Transistors
Standard Pack Quantity	4000
Product Group	Transistors
CNHTS	8541210000
CAHTS	8541210000
TARIC	8541210000
ECCN	EAR99
Type	GaAs MESFET
USHTS	8541210095

Your name

Your email

Enquiry

Products specifications

Manufacturer(MFG)	CEL
Part Category	RF JFET Transistors
RoHS	RoHS Compliance
Transistor Type	MESFET
Technology	GaAs
Operating Frequency	4 GHz
Gain	12 dB
Vds - Drain-Source Breakdown Voltage	5 V
Vgs - Gate-Source Breakdown Voltage	- 5 V
Id - Continuous Drain Current	120 mA
Operating Temperature(Max)	+ 125 C
Power Dissipation	250 mW
Mounting Type Style	SMD/SMT
Package Shape	SO-1
Package Style	Reel
Brand	CEL
Forward Transconductance - Min	45 mS
NF - Noise Figure	0.9 dB
P1dB - Compression Point	15 dBm
Product	RF JFET
Product Type	RF JFET Transistors
Standard Pack Quantity	4000
Product Group	Transistors
CNHTS	8541210000
CAHTS	8541210000
TARIC	8541210000
ECCN	EAR99
Type	GaAs MESFET
USHTS	8541210095

Request For NE722S01-T1B