NESG2101M05-T1-A

Part Number: NESG2101M05-T1-A

SKU: 84921

Manufacturer: CEL

Description: RF Bipolar Transistors NPN SiGe High Freq

Rohs State: Need to verify

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Availability: 69320 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	CEL
Part Category	RF Bipolar Transistors
RoHS	RoHS Compliance
Transistor Type	Bipolar
Material	SiliconGe
Transistor Polarity	NPN
Operating Frequency	17000 MHz (Typ)
Emitter- Base Voltage VEBO	1.5 V
Continuous Collector Current	0.1 A
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Configuration	Single
Mounting Type Style	SMD/SMT
Package Shape	SOT-343
Package Style	Reel
Brand	CEL
Collector- Base Voltage VCBO	13 V
DC Current Gain hFE Max	130 at 15 mA at 2 V
Power Dissipation	500 mW (1/2 W)
Product Type	RF Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
CNHTS	8541210000
CAHTS	8541210000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Type	RF Silicon Germanium
USHTS	8541210095

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Products specifications

Manufacturer(MFG)	CEL
Part Category	RF Bipolar Transistors
RoHS	RoHS Compliance
Transistor Type	Bipolar
Material	SiliconGe
Transistor Polarity	NPN
Operating Frequency	17000 MHz (Typ)
Emitter- Base Voltage VEBO	1.5 V
Continuous Collector Current	0.1 A
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Configuration	Single
Mounting Type Style	SMD/SMT
Package Shape	SOT-343
Package Style	Reel
Brand	CEL
Collector- Base Voltage VCBO	13 V
DC Current Gain hFE Max	130 at 15 mA at 2 V
Power Dissipation	500 mW (1/2 W)
Product Type	RF Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
CNHTS	8541210000
CAHTS	8541210000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Type	RF Silicon Germanium
USHTS	8541210095

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