NESG3032M14-T3-A

Part Number: NESG3032M14-T3-A

SKU: 224212

Manufacturer: CEL

Description: RF Bipolar Transistors NPN Silicn Germanium Amp/Oscilltr

Rohs State: Need to verify

Data Sheet: Download Datasheets

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Availability: 32462 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	CEL
Part Category	RF Bipolar Transistors
RoHS	RoHS Compliance
Transistor Type	Bipolar
Material	SiliconGe
Transistor Polarity	NPN
Emitter- Base Voltage VEBO	1.5 V
Continuous Collector Current	0.035 A
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Configuration	Single
Package Style	Reel
Brand	CEL
Collector- Base Voltage VCBO	12 V
DC Current Gain hFE Max	220 at 6 mA at 2 V
Power Dissipation	150 mW
Product Type	RF Bipolar Transistors
Standard Pack Quantity	10000
Product Group	Transistors
CNHTS	8541210000
CAHTS	8541210000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Type	RF Silicon Germanium
USHTS	8541210095

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Products specifications

Manufacturer(MFG)	CEL
Part Category	RF Bipolar Transistors
RoHS	RoHS Compliance
Transistor Type	Bipolar
Material	SiliconGe
Transistor Polarity	NPN
Emitter- Base Voltage VEBO	1.5 V
Continuous Collector Current	0.035 A
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Configuration	Single
Package Style	Reel
Brand	CEL
Collector- Base Voltage VCBO	12 V
DC Current Gain hFE Max	220 at 6 mA at 2 V
Power Dissipation	150 mW
Product Type	RF Bipolar Transistors
Standard Pack Quantity	10000
Product Group	Transistors
CNHTS	8541210000
CAHTS	8541210000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Type	RF Silicon Germanium
USHTS	8541210095

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