2N4953 PBFREE

Part Number: 2N4953 PBFREE

SKU: 150968

Manufacturer: Central Semiconductor

Description: Bipolar Transistors - BJT NPN 60Vcbo 40Vcbo 30Vceo 5.0Vebo 1A

Rohs State: Need to verify

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Availability: 48916 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Central Semiconductor
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	Through Hole
Package Shape	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	30 V
Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	0.3 V
Power Dissipation	625 mW
Gain Bandwidth Product fT	250 MHz
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Series	2N4953
Package Style	Bulk
Brand	Central Semiconductor
Continuous Collector Current	1 A
DC Collector/Base Gain hfe Min	75 at 10 V, 1 mA
DC Current Gain hFE Max	600 at 10 V, 150 mA
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	2500
Product Group	Transistors
TARIC	8541210000
ECCN	EAR99
Material	Silicon
USHTS	8541210075

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Products specifications

Manufacturer(MFG)	Central Semiconductor
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	Through Hole
Package Shape	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	30 V
Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	0.3 V
Power Dissipation	625 mW
Gain Bandwidth Product fT	250 MHz
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Series	2N4953
Package Style	Bulk
Brand	Central Semiconductor
Continuous Collector Current	1 A
DC Collector/Base Gain hfe Min	75 at 10 V, 1 mA
DC Current Gain hFE Max	600 at 10 V, 150 mA
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	2500
Product Group	Transistors
TARIC	8541210000
ECCN	EAR99
Material	Silicon
USHTS	8541210075

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