2N5059 TIN/LEAD

Part Number: 2N5059 TIN/LEAD

SKU: 328065

Manufacturer: Central Semiconductor

Description: Bipolar Transistors - BJT NPN 250Vcbo 250Vceo 6.0Vebo 150mA 1.0W

Rohs State: Need to verify

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Availability: 55580 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Central Semiconductor
Part Category	Bipolar Transistors - BJT
RoHS	Non-RoHS
Mounting Type Style	Through Hole
Package Shape	TO-39-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	250 V
Collector- Base Voltage VCBO	250 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	1 V
Maximum DC Collector Current	-
Power Dissipation	1 W
Gain Bandwidth Product fT	160 MHz
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 200 C
Series	2N5059
Package Style	Bulk
Brand	Central Semiconductor
Continuous Collector Current	150 mA
DC Collector/Base Gain hfe Min	10 at 5 mA, 25 V
DC Current Gain hFE Max	150 at 30 mA, 25 V
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	500
Product Group	Transistors
TARIC	8541210000
ECCN	EAR99
Material	Silicon
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	Central Semiconductor
Part Category	Bipolar Transistors - BJT
RoHS	Non-RoHS
Mounting Type Style	Through Hole
Package Shape	TO-39-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	250 V
Collector- Base Voltage VCBO	250 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	1 V
Maximum DC Collector Current	-
Power Dissipation	1 W
Gain Bandwidth Product fT	160 MHz
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 200 C
Series	2N5059
Package Style	Bulk
Brand	Central Semiconductor
Continuous Collector Current	150 mA
DC Collector/Base Gain hfe Min	10 at 5 mA, 25 V
DC Current Gain hFE Max	150 at 30 mA, 25 V
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	500
Product Group	Transistors
TARIC	8541210000
ECCN	EAR99
Material	Silicon
USHTS	8541290075

2N5059 TIN/LEAD

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