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Part Number: 2N6264 PBFREE
SKU: 8889
Manufacturer: Central Semiconductor
Description: Bipolar Transistors - BJT 170Vcbo 170Vcev 160Vcer 150Vceo 50W
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 39873 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Central Semiconductor
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style Through Hole
Package Shape TO-66-2
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 150 V
Collector- Base Voltage VCBO 170 V
Emitter- Base Voltage VEBO 7 V
Collector-Emitter Saturation Voltage 0.5 V
Power Dissipation 50 W
Gain Bandwidth Product fT 200 MHz
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 200 C
Series 2N62
Package Style Tube
Brand Central Semiconductor
Continuous Collector Current 3 a
DC Collector/Base Gain hfe Min 20 at 1 A, 2 V
DC Current Gain hFE Max 60 at 1 A, 2 V
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 30
Product Group Transistors
TARIC 8541210000
ECCN EAR99
Material Silicon
USHTS 8541290075
Products specifications
Manufacturer(MFG) Central Semiconductor
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style Through Hole
Package Shape TO-66-2
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 150 V
Collector- Base Voltage VCBO 170 V
Emitter- Base Voltage VEBO 7 V
Collector-Emitter Saturation Voltage 0.5 V
Power Dissipation 50 W
Gain Bandwidth Product fT 200 MHz
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 200 C
Series 2N62
Package Style Tube
Brand Central Semiconductor
Continuous Collector Current 3 a
DC Collector/Base Gain hfe Min 20 at 1 A, 2 V
DC Current Gain hFE Max 60 at 1 A, 2 V
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 30
Product Group Transistors
TARIC 8541210000
ECCN EAR99
Material Silicon
USHTS 8541290075
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