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CXDM1002N TR PBFREE
CXDM1002N TR PBFREE
Part Number:
CXDM1002N TR PBFREE
SKU:
242803
Manufacturer:
Central Semiconductor
Description:
MOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV
Rohs State:
Need to verify
Free Sample Request:
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Availability:
45711 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Central Semiconductor
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
SOT-89-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
2 A
Rds On - Drain-Source Resistance
140 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Qg - Gate Charge
6 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
1.2 W
Channel Mode
Enhancement
Package Style
Reel
Brand
Central Semiconductor
Configuration
Single
Product Type
MOSFET
Standard Pack Quantity
1000
Product Group
MOSFETs
CNHTS
8541290000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.004603 oz
USHTS
8541290095
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CXDM1002N TR PBFREE
Central Semiconductor
Products specifications
Manufacturer(MFG)
Central Semiconductor
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
SOT-89-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
2 A
Rds On - Drain-Source Resistance
140 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Qg - Gate Charge
6 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
1.2 W
Channel Mode
Enhancement
Package Style
Reel
Brand
Central Semiconductor
Configuration
Single
Product Type
MOSFET
Standard Pack Quantity
1000
Product Group
MOSFETs
CNHTS
8541290000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.004603 oz
USHTS
8541290095
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