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Part Number: CZT853 TR PBFREE
SKU: 260406
Manufacturer: Central Semiconductor
Description: Bipolar Transistors - BJT 200Vcbo 100Vceo 6.0Vebo 6.0A 3.0W
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 87663 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Central Semiconductor
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style SMD/SMT
Package Shape SOT-223-4
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 100 V
Collector- Base Voltage VCBO 200 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 340 mV
Power Dissipation 3 W
Gain Bandwidth Product fT 190 MHz
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Package Style Reel
Brand Central Semiconductor
Continuous Collector Current 6 A
DC Collector/Base Gain hfe Min 20 at 10 A, 2 V
DC Current Gain hFE Max 300 at 2 A, 2 V
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 1000
Product Group Transistors
TARIC 8541210000
ECCN EAR99
Material Silicon
USHTS 8541290075
Products specifications
Manufacturer(MFG) Central Semiconductor
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style SMD/SMT
Package Shape SOT-223-4
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 100 V
Collector- Base Voltage VCBO 200 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 340 mV
Power Dissipation 3 W
Gain Bandwidth Product fT 190 MHz
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Package Style Reel
Brand Central Semiconductor
Continuous Collector Current 6 A
DC Collector/Base Gain hfe Min 20 at 10 A, 2 V
DC Current Gain hFE Max 300 at 2 A, 2 V
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 1000
Product Group Transistors
TARIC 8541210000
ECCN EAR99
Material Silicon
USHTS 8541290075
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