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Part Number: TIP32C TIN/LEAD
SKU: 330303
Manufacturer: Central Semiconductor
Description: Bipolar Transistors - BJT 3A 100V 40W PNP 5.0Vebo 5.0A 40W
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 42755 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Central Semiconductor
Part Category Bipolar Transistors - BJT
RoHS Non-RoHS
Mounting Type Style Through Hole
Package Shape TO-220-3
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max 100 V
Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 1.2 V
Maximum DC Collector Current 5 A
Power Dissipation 40 W
Gain Bandwidth Product fT 3 MHz
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Series TIP32
Package Style Bulk
Brand Central Semiconductor
Continuous Collector Current 3 a
DC Collector/Base Gain hfe Min 25 at 1 A, 4 V
DC Current Gain hFE Max 50 at 3 A, 4 V
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 400
Product Group Transistors
TARIC 8541210000
ECCN EAR99
Material Silicon
USHTS 8541290095
Products specifications
Manufacturer(MFG) Central Semiconductor
Part Category Bipolar Transistors - BJT
RoHS Non-RoHS
Mounting Type Style Through Hole
Package Shape TO-220-3
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max 100 V
Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 1.2 V
Maximum DC Collector Current 5 A
Power Dissipation 40 W
Gain Bandwidth Product fT 3 MHz
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Series TIP32
Package Style Bulk
Brand Central Semiconductor
Continuous Collector Current 3 a
DC Collector/Base Gain hfe Min 25 at 1 A, 4 V
DC Current Gain hFE Max 50 at 3 A, 4 V
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 400
Product Group Transistors
TARIC 8541210000
ECCN EAR99
Material Silicon
USHTS 8541290095
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