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Bipolar Transistors - BJT
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2DA1213O-13
2DA1213O-13
Part Number:
2DA1213O-13
SKU:
7532
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 1W -50V
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
Free Sample Request:
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Availability:
7633 in stock
Delivery Date:
4-7 days
Call for pricing
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Specifications
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Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-89-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 50 V
Collector- Base Voltage VCBO
- 50 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 500 mV
Maximum DC Collector Current
- 2 A
Power Dissipation
1 W
Gain Bandwidth Product fT
160 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
2DA12
Package Style
Reel
Brand
Diodes Incorporated
Continuous Collector Current
- 2 A
DC Collector/Base Gain hfe Min
70
DC Current Gain hFE Max
140 at 500 mA, 2 V
Height
1.5 mm
Length
4.5 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
2500
Product Group
Transistors
Material
Silicon
Width
2.5 mm
CNHTS
8541290000
CAHTS
8541210000
JPHTS
8541210101
KRHTS
8541219000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Per Pcs Weight
0.001834 oz
USHTS
8541210095
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2DA1213O-13
Bipolar Transistors - BJT
2DA1213O-13
Diodes Incorporated
Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-89-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 50 V
Collector- Base Voltage VCBO
- 50 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 500 mV
Maximum DC Collector Current
- 2 A
Power Dissipation
1 W
Gain Bandwidth Product fT
160 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
2DA12
Package Style
Reel
Brand
Diodes Incorporated
Continuous Collector Current
- 2 A
DC Collector/Base Gain hfe Min
70
DC Current Gain hFE Max
140 at 500 mA, 2 V
Height
1.5 mm
Length
4.5 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
2500
Product Group
Transistors
Material
Silicon
Width
2.5 mm
CNHTS
8541290000
CAHTS
8541210000
JPHTS
8541210101
KRHTS
8541219000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Per Pcs Weight
0.001834 oz
USHTS
8541210095
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