2DB1132Q

2DB1132Q Diodes Incorporated

Part Number: 2DB1132Q

SKU: 7537

Manufacturer: Diodes Incorporated

Description: Bipolar Transistors - BJT

Rohs State: Need to verify

Data Sheet: Download Datasheets

Free Sample Request: Request Free Samples

Availability: 13456 in stock

Delivery Date: 4-7 days

Call for pricing

Specifications
Contact Us

Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
Mounting Type Style	SMD/SMT
Package Shape	SOT-89-4
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	32 V
Collector- Base Voltage VCBO	40 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	1 A
Power Dissipation	1000 mW
Gain Bandwidth Product fT	190 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	2DB1132
Brand	Diodes Incorporated
Continuous Collector Current	1 A
DC Collector/Base Gain hfe Min	180 at 100 mA, 3 V
Height	1.5 mm
Length	4.5 mm
Product Type	BJTs - Bipolar Transistors
Product Group	Transistors
Material	Silicon
TARIC	8541210000
Width	2.48 mm
USHTS	8541290095

Your name

Your email

Enquiry

Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
Mounting Type Style	SMD/SMT
Package Shape	SOT-89-4
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	32 V
Collector- Base Voltage VCBO	40 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	1 A
Power Dissipation	1000 mW
Gain Bandwidth Product fT	190 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	2DB1132
Brand	Diodes Incorporated
Continuous Collector Current	1 A
DC Collector/Base Gain hfe Min	180 at 100 mA, 3 V
Height	1.5 mm
Length	4.5 mm
Product Type	BJTs - Bipolar Transistors
Product Group	Transistors
Material	Silicon
TARIC	8541210000
Width	2.48 mm
USHTS	8541290095

Follow us

Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
[email protected]
+86-755-83299279