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2DB1182Q-13

Part Number: 2DB1182Q-13
SKU: 7539
Manufacturer: Diodes Incorporated
Description: Bipolar Transistors - BJT 32V PNP Trans -40V 10W -32V VCEO -2A
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 87340 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max - 32 V
Collector- Base Voltage VCBO - 40 V
Emitter- Base Voltage VEBO - 5 V
Collector-Emitter Saturation Voltage - 800 mV
Maximum DC Collector Current - 3 A
Power Dissipation 10 W
Gain Bandwidth Product fT 110 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Qualification Standard AEC-Q101
Series 2DB11
Package Style Reel
Brand Diodes Incorporated
DC Collector/Base Gain hfe Min 120
DC Current Gain hFE Max 270 at - 500 mA, - 3 V
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 2500
Product Group Transistors
Material Silicon
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290075
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  • 2DB1182Q-13 Datasheet
  • 2DB1182Q-13 Application
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  • 2DB1182Q-13 Bipolar Transistors - BJT
  • 2DB1182Q-13 Diodes Incorporated
Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max - 32 V
Collector- Base Voltage VCBO - 40 V
Emitter- Base Voltage VEBO - 5 V
Collector-Emitter Saturation Voltage - 800 mV
Maximum DC Collector Current - 3 A
Power Dissipation 10 W
Gain Bandwidth Product fT 110 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Qualification Standard AEC-Q101
Series 2DB11
Package Style Reel
Brand Diodes Incorporated
DC Collector/Base Gain hfe Min 120
DC Current Gain hFE Max 270 at - 500 mA, - 3 V
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 2500
Product Group Transistors
Material Silicon
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290075
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