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2DB1188R-13

Part Number: 2DB1188R-13
SKU: 7340
Manufacturer: Diodes Incorporated
Description: Bipolar Transistors - BJT 1000W -32Vceo
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 51823 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style SMD/SMT
Package Shape SOT-89-3
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max 32 V
Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 800 mV
Maximum DC Collector Current 2 A
Power Dissipation 1 W
Gain Bandwidth Product fT 120 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Series 2DB11
Package Style Reel
Brand Diodes Incorporated
DC Collector/Base Gain hfe Min 180
DC Current Gain hFE Max 390
Height 1.5 mm
Length 4.5 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 2500
Product Group Transistors
Material Silicon
Width 2.48 mm
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.001834 oz
USHTS 8541290075
  • 2DB1188R-13 Price
  • 2DB1 Series
  • 2DB1188R-13 Datasheet
  • 2DB1188R-13 Application
  • 2DB1188R-13 Pdf
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  • 2DB1188R-13 In Stock
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  • 2DB1188R-13 Bipolar Transistors - BJT
  • 2DB1188R-13 Diodes Incorporated
Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style SMD/SMT
Package Shape SOT-89-3
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max 32 V
Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 800 mV
Maximum DC Collector Current 2 A
Power Dissipation 1 W
Gain Bandwidth Product fT 120 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Series 2DB11
Package Style Reel
Brand Diodes Incorporated
DC Collector/Base Gain hfe Min 180
DC Current Gain hFE Max 390
Height 1.5 mm
Length 4.5 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 2500
Product Group Transistors
Material Silicon
Width 2.48 mm
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.001834 oz
USHTS 8541290075
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