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Bipolar Transistors - BJT
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2DB1697-13
2DB1697-13
Part Number:
2DB1697-13
SKU:
9059
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT LO VSAT PNP SMT 2.5K
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
Free Sample Request:
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Availability:
31578 in stock
Delivery Date:
4-7 days
Call for pricing
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Specifications
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Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-89-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 12 V
Collector- Base Voltage VCBO
- 15 V
Emitter- Base Voltage VEBO
- 6 V
Collector-Emitter Saturation Voltage
- 65 mV
Maximum DC Collector Current
- 4 A
Power Dissipation
900 mW
Gain Bandwidth Product fT
140 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
2DB16
Package Style
Reel
Brand
Diodes Incorporated
Continuous Collector Current
- 2 A
DC Collector/Base Gain hfe Min
270
DC Current Gain hFE Max
680
Height
1.5 mm
Length
4.5 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
2500
Product Group
Transistors
Material
Silicon
Width
2.5 mm
CNHTS
8541210000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Per Pcs Weight
0.001834 oz
USHTS
8541290095
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2DB1697-13
Bipolar Transistors - BJT
2DB1697-13
Diodes Incorporated
Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-89-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 12 V
Collector- Base Voltage VCBO
- 15 V
Emitter- Base Voltage VEBO
- 6 V
Collector-Emitter Saturation Voltage
- 65 mV
Maximum DC Collector Current
- 4 A
Power Dissipation
900 mW
Gain Bandwidth Product fT
140 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
2DB16
Package Style
Reel
Brand
Diodes Incorporated
Continuous Collector Current
- 2 A
DC Collector/Base Gain hfe Min
270
DC Current Gain hFE Max
680
Height
1.5 mm
Length
4.5 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
2500
Product Group
Transistors
Material
Silicon
Width
2.5 mm
CNHTS
8541210000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Per Pcs Weight
0.001834 oz
USHTS
8541290095
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