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2N6715

Part Number: 2N6715
SKU: 150751
Manufacturer: Diodes Incorporated
Description: Bipolar Transistors - BJT
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 15949 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category Bipolar Transistors - BJT
RoHS Non-RoHS
Mounting Type Style Through Hole
Package Shape TO-92-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 40 V
Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 0.5 V
Maximum DC Collector Current 1 A
Power Dissipation 2 W
Gain Bandwidth Product fT 500 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Series 2N6715
Brand Diodes Incorporated
DC Current Gain hFE Max 55 at 10m at 1 V
Height 4.01 mm
Length 4.77 mm
Product Type BJTs - Bipolar Transistors
Product Group Transistors
Material Silicon
CNHTS 8541210000
CAHTS 8541210000
TARIC 8541210000
ECCN EAR99
Width 2.41 mm
USHTS 8541210095
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  • 2N6715 Bipolar Transistors - BJT
  • 2N6715 Diodes Incorporated
Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category Bipolar Transistors - BJT
RoHS Non-RoHS
Mounting Type Style Through Hole
Package Shape TO-92-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 40 V
Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 0.5 V
Maximum DC Collector Current 1 A
Power Dissipation 2 W
Gain Bandwidth Product fT 500 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Series 2N6715
Brand Diodes Incorporated
DC Current Gain hFE Max 55 at 10m at 1 V
Height 4.01 mm
Length 4.77 mm
Product Type BJTs - Bipolar Transistors
Product Group Transistors
Material Silicon
CNHTS 8541210000
CAHTS 8541210000
TARIC 8541210000
ECCN EAR99
Width 2.41 mm
USHTS 8541210095
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