2N6717

2N6717 Diodes Incorporated

Part Number: 2N6717

SKU: 272635

Manufacturer: Diodes Incorporated

Description: Bipolar Transistors - BJT

Rohs State: Need to verify

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Availability: 96890 in stock

Delivery Date: 4-7 days

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Specifications
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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	Non-RoHS
Mounting Type Style	Through Hole
Package Shape	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	80 V
Collector- Base Voltage VCBO	80 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	1 A
Power Dissipation	1000 mW
Gain Bandwidth Product fT	500 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	2N6717
Brand	Diodes Incorporated
DC Current Gain hFE Max	80 at 50 mA, 1 V
Height	4.01 mm
Length	4.77 mm
Product Type	BJTs - Bipolar Transistors
Product Group	Transistors
Material	Silicon
TARIC	8541210000
Width	2.41 mm
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	Non-RoHS
Mounting Type Style	Through Hole
Package Shape	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	80 V
Collector- Base Voltage VCBO	80 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	1 A
Power Dissipation	1000 mW
Gain Bandwidth Product fT	500 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	2N6717
Brand	Diodes Incorporated
DC Current Gain hFE Max	80 at 50 mA, 1 V
Height	4.01 mm
Length	4.77 mm
Product Type	BJTs - Bipolar Transistors
Product Group	Transistors
Material	Silicon
TARIC	8541210000
Width	2.41 mm
USHTS	8541290095

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