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2N7002-7-F

Part Number: 2N7002-7-F
SKU: 80084
Manufacturer: Diodes Incorporated
Description: MOSFET 60V 200mW
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 62697 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-23-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 210 mA
Rds On - Drain-Source Resistance 5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 223 pC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 540 mW
Channel Mode Enhancement
Package Style Reel
Brand Diodes Incorporated
Configuration Single
Fall Time 5.6 ns
Forward Transconductance - Min 80 mS
Height 1 mm
Length 2.9 mm
Product MOSFET Small Signal
Product Type MOSFET
Rise Time 3 ns
Series 2N7002
Standard Pack Quantity 3000
Product Group MOSFETs
Transistor Type 1 N-Channel
Type Enhancement Mode Field Effect Transistor
Typical Turn-Off Delay Time 7.6 ns
Typical Turn-On Delay Time 2.8 ns
Width 1.3 mm
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 0.000282 oz
USHTS 8541210095
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  • 2N7002-7-F MOSFET
  • 2N7002-7-F Diodes Incorporated
Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-23-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 210 mA
Rds On - Drain-Source Resistance 5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 223 pC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 540 mW
Channel Mode Enhancement
Package Style Reel
Brand Diodes Incorporated
Configuration Single
Fall Time 5.6 ns
Forward Transconductance - Min 80 mS
Height 1 mm
Length 2.9 mm
Product MOSFET Small Signal
Product Type MOSFET
Rise Time 3 ns
Series 2N7002
Standard Pack Quantity 3000
Product Group MOSFETs
Transistor Type 1 N-Channel
Type Enhancement Mode Field Effect Transistor
Typical Turn-Off Delay Time 7.6 ns
Typical Turn-On Delay Time 2.8 ns
Width 1.3 mm
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 0.000282 oz
USHTS 8541210095
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