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2N7002DWKX-7

Part Number: 2N7002DWKX-7
SKU: 310565
Manufacturer: Diodes Incorporated
Description: MOSFET
Rohs State: Need to verify
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Availability: 75984 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-363-6
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 200 mA
Rds On - Drain-Source Resistance 6 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 800 mV
Qg - Gate Charge 1.4 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 400 mW
Channel Mode Enhancement
Brand Diodes Incorporated
Configuration Dual
Fall Time 8.1 ns
Forward Transconductance - Min 80 mS
Product Type MOSFET
Rise Time 2.8 ns
Series 2N7002DW
Product Group MOSFETs
Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 17.4 ns
Typical Turn-On Delay Time 3 ns
CNHTS 8541210000
TARIC 8541290000
Per Pcs Weight 0.000265 oz
USHTS 8541290095
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Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-363-6
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 200 mA
Rds On - Drain-Source Resistance 6 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 800 mV
Qg - Gate Charge 1.4 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 400 mW
Channel Mode Enhancement
Brand Diodes Incorporated
Configuration Dual
Fall Time 8.1 ns
Forward Transconductance - Min 80 mS
Product Type MOSFET
Rise Time 2.8 ns
Series 2N7002DW
Product Group MOSFETs
Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 17.4 ns
Typical Turn-On Delay Time 3 ns
CNHTS 8541210000
TARIC 8541290000
Per Pcs Weight 0.000265 oz
USHTS 8541290095
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