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ams
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Semiconductors
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Discrete Semiconductors
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Transistors
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MOSFET
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ZXMD63N03XTA
ZXMD63N03XTA
Part Number:
ZXMD63N03XTA
SKU:
148333
Manufacturer:
Diodes Incorporated
Description:
MOSFET Dual 30V N Chl HDMOS
Rohs State:
Need to verify
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Availability:
62179 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
MSOP-8
Transistor Polarity
N-Channel
Number of Channels
2 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
2.3 A
Rds On - Drain-Source Resistance
135 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
1 V
Qg - Gate Charge
8 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
870 mW
Channel Mode
Enhancement
Package Style
Reel
Brand
Diodes Incorporated
Configuration
Dual
Fall Time
4.1 ns
Forward Transconductance - Min
1.9 S
Height
0.95 mm
Length
3.1 mm
Product
MOSFET Small Signal
Product Type
MOSFET
Rise Time
4.1 ns
Series
ZXMD63
Standard Pack Quantity
1000
Product Group
MOSFETs
Transistor Type
2 N-Channel
Type
MOSFET
Typical Turn-Off Delay Time
9.6 ns
Typical Turn-On Delay Time
2.5 ns
Width
3.1 mm
CNHTS
8541210000
CAHTS
8541210000
JPHTS
8541210101
KRHTS
8541219000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Per Pcs Weight
0.004938 oz
USHTS
8541210095
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ZXMD63N03XTA
Diodes Incorporated
Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
MSOP-8
Transistor Polarity
N-Channel
Number of Channels
2 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
2.3 A
Rds On - Drain-Source Resistance
135 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
1 V
Qg - Gate Charge
8 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
870 mW
Channel Mode
Enhancement
Package Style
Reel
Brand
Diodes Incorporated
Configuration
Dual
Fall Time
4.1 ns
Forward Transconductance - Min
1.9 S
Height
0.95 mm
Length
3.1 mm
Product
MOSFET Small Signal
Product Type
MOSFET
Rise Time
4.1 ns
Series
ZXMD63
Standard Pack Quantity
1000
Product Group
MOSFETs
Transistor Type
2 N-Channel
Type
MOSFET
Typical Turn-Off Delay Time
9.6 ns
Typical Turn-On Delay Time
2.5 ns
Width
3.1 mm
CNHTS
8541210000
CAHTS
8541210000
JPHTS
8541210101
KRHTS
8541219000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Per Pcs Weight
0.004938 oz
USHTS
8541210095
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