0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

ZXMN10A09KTC

Part Number: ZXMN10A09KTC
SKU: 148334
Manufacturer: Diodes Incorporated
Description: MOSFET MOSFET N-CH 100V
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 3412 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 7.7 A
Rds On - Drain-Source Resistance 100 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 26 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 10.1 W
Channel Mode Enhancement
Package Style Reel
Brand Diodes Incorporated
Configuration Single
Fall Time 12.3 ns
Height 2.39 mm
Length 6.73 mm
Product Type MOSFET
Rise Time 5.3 ns
Series ZXMN10
Standard Pack Quantity 2500
Product Group MOSFETs
Transistor Type 1 N-Channel
Type MOSFET
Typical Turn-Off Delay Time 27.5 ns
Typical Turn-On Delay Time 6.8 ns
Width 6.22 mm
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290095
  • ZXMN10A09KTC Price
  • ZXMN Series
  • ZXMN10A09KTC Datasheet
  • ZXMN10A09KTC Application
  • ZXMN10A09KTC Pdf
  • ZXMN10A09KTC Pinout
  • ZXMN10A09KTC Image
  • ZXMN10A09KTC Picture
  • ZXMN10A09KTC In Stock
  • ZXMN10A09KTC Distributor
  • ZXMN10A09KTC MOSFET
  • ZXMN10A09KTC Diodes Incorporated
Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 7.7 A
Rds On - Drain-Source Resistance 100 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 26 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 10.1 W
Channel Mode Enhancement
Package Style Reel
Brand Diodes Incorporated
Configuration Single
Fall Time 12.3 ns
Height 2.39 mm
Length 6.73 mm
Product Type MOSFET
Rise Time 5.3 ns
Series ZXMN10
Standard Pack Quantity 2500
Product Group MOSFETs
Transistor Type 1 N-Channel
Type MOSFET
Typical Turn-Off Delay Time 27.5 ns
Typical Turn-On Delay Time 6.8 ns
Width 6.22 mm
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290095
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display