ZXMN2F30FHQTA

Part Number: ZXMN2F30FHQTA

SKU: 331938

Manufacturer: Diodes Incorporated

Description: MOSFET MOSFET BVDSS: 8V-24V

Rohs State: Need to verify

Data Sheet: Download Datasheets

Free Sample Request: Request Free Samples

Availability: 24683 in stock

Delivery Date: 4-7 days

Call for pricing

Diodes Incorporated ZXMN2F30FHQTA is available at WIN SOURCE. Please review product page below for detailed information, including ZXMN2F30FHQTA price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for ZXMN2F30FHQTA to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

Specifications
Contact Us

Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	MOSFET
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	SOT-23-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	4.9 A
Rds On - Drain-Source Resistance	45 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage	600 mV
Qg - Gate Charge	4.8 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	1.4 W
Channel Mode	Enhancement
Qualification Standard	AEC-Q101
Package Style	Reel
Brand	Diodes Incorporated
Configuration	Single
Product Type	MOSFET
Standard Pack Quantity	3000
Product Group	MOSFETs
CNHTS	8541290000
CAHTS	8541100090
JPHTS	854110090
KRHTS	8541109000
TARIC	8541100000
MXHTS	8541100101
ECCN	EAR99
Per Pcs Weight	0.000282 oz
USHTS	8541290095

Your name

Your email

Enquiry

Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	MOSFET
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	SOT-23-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	4.9 A
Rds On - Drain-Source Resistance	45 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage	600 mV
Qg - Gate Charge	4.8 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	1.4 W
Channel Mode	Enhancement
Qualification Standard	AEC-Q101
Package Style	Reel
Brand	Diodes Incorporated
Configuration	Single
Product Type	MOSFET
Standard Pack Quantity	3000
Product Group	MOSFETs
CNHTS	8541290000
CAHTS	8541100090
JPHTS	854110090
KRHTS	8541109000
TARIC	8541100000
MXHTS	8541100101
ECCN	EAR99
Per Pcs Weight	0.000282 oz
USHTS	8541290095

ZXMN2F30FHQTA

Request For ZXMN2F30FHQTA