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ZXMN6A11DN8TA

Part Number: ZXMN6A11DN8TA
SKU: 150746
Manufacturer: Diodes Incorporated
Description: MOSFET Dl 60V N-Chnl UMOS
Rohs State: Need to verify
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Availability: 21148 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOIC-8
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 3.2 A
Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 5.7 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2.1 W
Channel Mode Enhancement
Package Style Reel
Brand Diodes Incorporated
Configuration Dual
Fall Time 4.6 ns
Height 1.5 mm
Length 5 mm
Product Type MOSFET
Rise Time 3.5 ns
Series ZXMN6A111
Standard Pack Quantity 500
Product Group MOSFETs
Transistor Type 2 N-Channel
Type MOSFET
Typical Turn-Off Delay Time 8.2 ns
Typical Turn-On Delay Time 1.95 ns
Width 4 mm
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.026455 oz
USHTS 8541290095
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Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOIC-8
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 3.2 A
Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 5.7 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2.1 W
Channel Mode Enhancement
Package Style Reel
Brand Diodes Incorporated
Configuration Dual
Fall Time 4.6 ns
Height 1.5 mm
Length 5 mm
Product Type MOSFET
Rise Time 3.5 ns
Series ZXMN6A111
Standard Pack Quantity 500
Product Group MOSFETs
Transistor Type 2 N-Channel
Type MOSFET
Typical Turn-Off Delay Time 8.2 ns
Typical Turn-On Delay Time 1.95 ns
Width 4 mm
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.026455 oz
USHTS 8541290095
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