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Part Number: ZXMP3F35N8TA
SKU: 110430
Manufacturer: Diodes Incorporated
Description: MOSFET 30V P-CHANNEL ENHANCEMENT MODE
Rohs State: Need to verify
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Availability: 48450 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOIC-8
Transistor Polarity P-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 12.3 A
Rds On - Drain-Source Resistance 12 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2.8 W
Channel Mode Enhancement
Brand Diodes Incorporated
Configuration Dual
Fall Time 55.6 ns
Height 1.5 mm
Length 5 mm
Product Type MOSFET
Rise Time 9.9 ns
Standard Pack Quantity 500
Product Group MOSFETs
Transistor Type 2 P-Channel
Typical Turn-Off Delay Time 103 ns
Typical Turn-On Delay Time 5.4 ns
Width 4 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.026455 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOIC-8
Transistor Polarity P-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 12.3 A
Rds On - Drain-Source Resistance 12 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2.8 W
Channel Mode Enhancement
Brand Diodes Incorporated
Configuration Dual
Fall Time 55.6 ns
Height 1.5 mm
Length 5 mm
Product Type MOSFET
Rise Time 9.9 ns
Standard Pack Quantity 500
Product Group MOSFETs
Transistor Type 2 P-Channel
Typical Turn-Off Delay Time 103 ns
Typical Turn-On Delay Time 5.4 ns
Width 4 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.026455 oz
USHTS 8541290095
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