0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

ZXMS6005DN8-13

Part Number: ZXMS6005DN8-13
SKU: 77590
Manufacturer: Diodes Incorporated
Description: MOSFET Low Side IntelliFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 50903 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOIC-8
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 1.8 A
Rds On - Drain-Source Resistance 150 mOhms
Vgs - Gate-Source Voltage - 5 V, + 5 V
Vgs th - Gate-Source Threshold Voltage 700 mV
Qg - Gate Charge -
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 125 C
Power Dissipation 1.67 W
Channel Mode Enhancement
Package Style Reel
Brand Diodes Incorporated
Configuration Dual
Fall Time 19 us, 19 us
Product Type MOSFET
Rise Time 14 us, 14 us
Standard Pack Quantity 2500
Product Group MOSFETs
Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 34 us, 34 us
Typical Turn-On Delay Time 6 us, 6 us
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.026455 oz
USHTS 8541290095
  • ZXMS6005DN8-13 Price
  • ZXMS Series
  • ZXMS6005DN8-13 Datasheet
  • ZXMS6005DN8-13 Application
  • ZXMS6005DN8-13 Pdf
  • ZXMS6005DN8-13 Pinout
  • ZXMS6005DN8-13 Image
  • ZXMS6005DN8-13 Picture
  • ZXMS6005DN8-13 In Stock
  • ZXMS6005DN8-13 Distributor
  • ZXMS6005DN8-13 MOSFET
  • ZXMS6005DN8-13 Diodes Incorporated
Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOIC-8
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 1.8 A
Rds On - Drain-Source Resistance 150 mOhms
Vgs - Gate-Source Voltage - 5 V, + 5 V
Vgs th - Gate-Source Threshold Voltage 700 mV
Qg - Gate Charge -
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 125 C
Power Dissipation 1.67 W
Channel Mode Enhancement
Package Style Reel
Brand Diodes Incorporated
Configuration Dual
Fall Time 19 us, 19 us
Product Type MOSFET
Rise Time 14 us, 14 us
Standard Pack Quantity 2500
Product Group MOSFETs
Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 34 us, 34 us
Typical Turn-On Delay Time 6 us, 6 us
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.026455 oz
USHTS 8541290095
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display