ZXT10P12DE6TA

Part Number: ZXT10P12DE6TA

SKU: 327724

Manufacturer: Diodes Incorporated

Description: Bipolar Transistors - BJT 12V PNP SuperSOT4

Rohs State: Need to verify

Data Sheet: Download Datasheets

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Availability: 93327 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	SMD/SMT
Package Shape	SOT-23-6
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 12 V
Collector- Base Voltage VCBO	- 12 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	- 195 mV
Maximum DC Collector Current	3 A
Power Dissipation	1.1 W
Gain Bandwidth Product fT	110 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	ZXT10
Package Style	Reel
Brand	Diodes Incorporated
Continuous Collector Current	- 3 A
DC Collector/Base Gain hfe Min	300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 2.5 A, 2 V, 60 at 8 A, 2 V, 45 at 10 A, 2 V
DC Current Gain hFE Max	300 at 10 mA, 2 V
Height	1.3 mm
Length	3 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
Material	Silicon
Width	1.75 mm
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.000229 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	SMD/SMT
Package Shape	SOT-23-6
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 12 V
Collector- Base Voltage VCBO	- 12 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	- 195 mV
Maximum DC Collector Current	3 A
Power Dissipation	1.1 W
Gain Bandwidth Product fT	110 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	ZXT10
Package Style	Reel
Brand	Diodes Incorporated
Continuous Collector Current	- 3 A
DC Collector/Base Gain hfe Min	300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 2.5 A, 2 V, 60 at 8 A, 2 V, 45 at 10 A, 2 V
DC Current Gain hFE Max	300 at 10 mA, 2 V
Height	1.3 mm
Length	3 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
Material	Silicon
Width	1.75 mm
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.000229 oz
USHTS	8541290075

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