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Part Number: ZXT11N15DFTA
SKU: 306287
Manufacturer: Diodes Incorporated
Description: Bipolar Transistors - BJT 15V NPN SuperSOT4
Rohs State: Need to verify
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Availability: 66499 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style SMD/SMT
Package Shape SOT-23-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 15 V
Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 7.5 V
Collector-Emitter Saturation Voltage 110 mV
Maximum DC Collector Current 3 A
Power Dissipation 625 mW
Gain Bandwidth Product fT 145 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Series ZXT11N15
Package Style Reel
Brand Diodes Incorporated
Continuous Collector Current 3 a
DC Collector/Base Gain hfe Min 200 at 10 mA, 2 V, 300 at 200 mA, 2 V, 250 at 1 A, 2 V, 200 at 3 A, 2 V, 150 at 5 A, 2 V
DC Current Gain hFE Max 200 at 10 mA, 2 V
Height 1 mm
Length 3.05 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 3000
Product Group Transistors
Material Silicon
Width 1.4 mm
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 0.000282 oz
USHTS 8541210075
Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category Bipolar Transistors - BJT
RoHS RoHS Compliance
Mounting Type Style SMD/SMT
Package Shape SOT-23-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 15 V
Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 7.5 V
Collector-Emitter Saturation Voltage 110 mV
Maximum DC Collector Current 3 A
Power Dissipation 625 mW
Gain Bandwidth Product fT 145 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Series ZXT11N15
Package Style Reel
Brand Diodes Incorporated
Continuous Collector Current 3 a
DC Collector/Base Gain hfe Min 200 at 10 mA, 2 V, 300 at 200 mA, 2 V, 250 at 1 A, 2 V, 200 at 3 A, 2 V, 150 at 5 A, 2 V
DC Current Gain hFE Max 200 at 10 mA, 2 V
Height 1 mm
Length 3.05 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 3000
Product Group Transistors
Material Silicon
Width 1.4 mm
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 0.000282 oz
USHTS 8541210075
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