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Bipolar Transistors - BJT
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ZXT12N50DXTC
ZXT12N50DXTC
Part Number:
ZXT12N50DXTC
SKU:
77595
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT Dual 50V NPN
Rohs State:
Need to verify
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Availability:
59814 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
MSOP-8
Transistor Polarity
NPN
Configuration
Dual
Collector- Emitter Voltage VCEO Max
50 V
Collector- Base Voltage VCBO
100 V
Emitter- Base Voltage VEBO
7.5 V
Collector-Emitter Saturation Voltage
135 mV
Maximum DC Collector Current
3 A
Power Dissipation
870 mW
Gain Bandwidth Product fT
132 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXT12
Package Style
Reel
Brand
Diodes Incorporated
Continuous Collector Current
3 a
DC Collector/Base Gain hfe Min
250 at 10 mA, 2 V, 300 at 1 A, 2 V, 150 at 3 A, 2 V, 50 at 5 A, 2 V
DC Current Gain hFE Max
250 at 10 mA, 2 V
Height
0.95 mm
Length
3.1 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
4000
Product Group
Transistors
Material
Silicon
Width
3.1 mm
CNHTS
8541210000
CAHTS
8541210000
JPHTS
8541210101
KRHTS
8541219000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Per Pcs Weight
0.004938 oz
USHTS
8541210075
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ZXT12N50DXTC
Bipolar Transistors - BJT
ZXT12N50DXTC
Diodes Incorporated
Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
MSOP-8
Transistor Polarity
NPN
Configuration
Dual
Collector- Emitter Voltage VCEO Max
50 V
Collector- Base Voltage VCBO
100 V
Emitter- Base Voltage VEBO
7.5 V
Collector-Emitter Saturation Voltage
135 mV
Maximum DC Collector Current
3 A
Power Dissipation
870 mW
Gain Bandwidth Product fT
132 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXT12
Package Style
Reel
Brand
Diodes Incorporated
Continuous Collector Current
3 a
DC Collector/Base Gain hfe Min
250 at 10 mA, 2 V, 300 at 1 A, 2 V, 150 at 3 A, 2 V, 50 at 5 A, 2 V
DC Current Gain hFE Max
250 at 10 mA, 2 V
Height
0.95 mm
Length
3.1 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
4000
Product Group
Transistors
Material
Silicon
Width
3.1 mm
CNHTS
8541210000
CAHTS
8541210000
JPHTS
8541210101
KRHTS
8541219000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Per Pcs Weight
0.004938 oz
USHTS
8541210075
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