ZXT12P12DXTA

Part Number: ZXT12P12DXTA

SKU: 16843

Manufacturer: Diodes Incorporated

Description: Bipolar Transistors - BJT Dual 12V PNP

Rohs State: Need to verify

Data Sheet: Download Datasheets

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Availability: 16762 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	SMD/SMT
Package Shape	MSOP-8
Transistor Polarity	PNP
Configuration	Dual
Collector- Emitter Voltage VCEO Max	- 12 V
Collector- Base Voltage VCBO	- 20 V
Emitter- Base Voltage VEBO	7.5 V
Collector-Emitter Saturation Voltage	- 150 mV
Maximum DC Collector Current	3 A
Power Dissipation	870 mW
Gain Bandwidth Product fT	85 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	ZXT12
Package Style	Reel
Brand	Diodes Incorporated
Continuous Collector Current	- 3 A
DC Collector/Base Gain hfe Min	300 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 3 A, 2 V, 20 at 12 A, 2 V
DC Current Gain hFE Max	300 at 10 mA, 2 V
Height	0.95 mm
Length	3.1 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	1000
Product Group	Transistors
Material	Silicon
Width	3.1 mm
CNHTS	8541210000
CAHTS	8541210000
JPHTS	8541210101
KRHTS	8541219000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Per Pcs Weight	0.004938 oz
USHTS	8541210095

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	SMD/SMT
Package Shape	MSOP-8
Transistor Polarity	PNP
Configuration	Dual
Collector- Emitter Voltage VCEO Max	- 12 V
Collector- Base Voltage VCBO	- 20 V
Emitter- Base Voltage VEBO	7.5 V
Collector-Emitter Saturation Voltage	- 150 mV
Maximum DC Collector Current	3 A
Power Dissipation	870 mW
Gain Bandwidth Product fT	85 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	ZXT12
Package Style	Reel
Brand	Diodes Incorporated
Continuous Collector Current	- 3 A
DC Collector/Base Gain hfe Min	300 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 3 A, 2 V, 20 at 12 A, 2 V
DC Current Gain hFE Max	300 at 10 mA, 2 V
Height	0.95 mm
Length	3.1 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	1000
Product Group	Transistors
Material	Silicon
Width	3.1 mm
CNHTS	8541210000
CAHTS	8541210000
JPHTS	8541210101
KRHTS	8541219000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Per Pcs Weight	0.004938 oz
USHTS	8541210095

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