ZXTC2061E6TA

Part Number: ZXTC2061E6TA

SKU: 87641

Manufacturer: Diodes Incorporated

Description: Bipolar Transistors - BJT 12V 1A Medium Power TRANSISTOR

Rohs State: Need to verify

Data Sheet: Download Datasheets

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Availability: 14957 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	SMD/SMT
Package Shape	SOT-26-6
Transistor Polarity	NPN, PNP
Configuration	Dual
Collector- Emitter Voltage VCEO Max	12 V, - 12 V
Collector- Base Voltage VCBO	20 V, - 12 V
Emitter- Base Voltage VEBO	7 V, - 7 V
Collector-Emitter Saturation Voltage	145 mV, - 150 mV
Maximum DC Collector Current	5 A, - 3.5 A
Power Dissipation	1.7 W
Gain Bandwidth Product fT	260 MHz, 310 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	ZXTC206
Package Style	Reel
Brand	Diodes Incorporated
DC Collector/Base Gain hfe Min	500 at 10 mA, 2 V at NPN, 480 at 1 A, 2 V at NPN, 260 at 5 A, 2 V at NPN, 500 at 10 mA, 2 V at PNP, 290 at 1 A, 2 V at PNP, 75 at 3.5 A, 2 V at PNP
DC Current Gain hFE Max	500 at 10 mA, 2 V
Height	1.3 mm
Length	3.1 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
Material	Silicon
Width	1.8 mm
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.000529 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	SMD/SMT
Package Shape	SOT-26-6
Transistor Polarity	NPN, PNP
Configuration	Dual
Collector- Emitter Voltage VCEO Max	12 V, - 12 V
Collector- Base Voltage VCBO	20 V, - 12 V
Emitter- Base Voltage VEBO	7 V, - 7 V
Collector-Emitter Saturation Voltage	145 mV, - 150 mV
Maximum DC Collector Current	5 A, - 3.5 A
Power Dissipation	1.7 W
Gain Bandwidth Product fT	260 MHz, 310 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	ZXTC206
Package Style	Reel
Brand	Diodes Incorporated
DC Collector/Base Gain hfe Min	500 at 10 mA, 2 V at NPN, 480 at 1 A, 2 V at NPN, 260 at 5 A, 2 V at NPN, 500 at 10 mA, 2 V at PNP, 290 at 1 A, 2 V at PNP, 75 at 3.5 A, 2 V at PNP
DC Current Gain hFE Max	500 at 10 mA, 2 V
Height	1.3 mm
Length	3.1 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
Material	Silicon
Width	1.8 mm
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.000529 oz
USHTS	8541290075

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