ZXTC2062E6TA

Part Number: ZXTC2062E6TA

SKU: 302580

Manufacturer: Diodes Incorporated

Description: Bipolar Transistors - BJT 20V 1A Complementary Med power transisto

Rohs State: Need to verify

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Availability: 75252 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	SMD/SMT
Package Shape	SOT-26-6
Transistor Polarity	NPN, PNP
Configuration	Dual
Collector- Emitter Voltage VCEO Max	20 V, - 20 V
Collector- Base Voltage VCBO	100 V, - 25 V
Emitter- Base Voltage VEBO	7 V, - 7 V
Collector-Emitter Saturation Voltage	140 mV, - 190 mV
Maximum DC Collector Current	4 A, - 3.5 A
Power Dissipation	1.7 W
Gain Bandwidth Product fT	215 MHz, 290 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	ZXTC2062
Package Style	Reel
Brand	Diodes Incorporated
DC Collector/Base Gain hfe Min	300 at 10 mA, 2 V at NPN, 280 at 1 A, 2 V at NPN, 140 at 4 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 170 at 1 A, 2 V at PNP, 65 at 3.5 A, 2 V at PNP
DC Current Gain hFE Max	300 at 10 mA, 2 V
Height	1.3 mm
Length	3.1 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
Material	Silicon
Width	1.8 mm
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.000529 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	SMD/SMT
Package Shape	SOT-26-6
Transistor Polarity	NPN, PNP
Configuration	Dual
Collector- Emitter Voltage VCEO Max	20 V, - 20 V
Collector- Base Voltage VCBO	100 V, - 25 V
Emitter- Base Voltage VEBO	7 V, - 7 V
Collector-Emitter Saturation Voltage	140 mV, - 190 mV
Maximum DC Collector Current	4 A, - 3.5 A
Power Dissipation	1.7 W
Gain Bandwidth Product fT	215 MHz, 290 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	ZXTC2062
Package Style	Reel
Brand	Diodes Incorporated
DC Collector/Base Gain hfe Min	300 at 10 mA, 2 V at NPN, 280 at 1 A, 2 V at NPN, 140 at 4 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 170 at 1 A, 2 V at PNP, 65 at 3.5 A, 2 V at PNP
DC Current Gain hFE Max	300 at 10 mA, 2 V
Height	1.3 mm
Length	3.1 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
Material	Silicon
Width	1.8 mm
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.000529 oz
USHTS	8541290075

ZXTC2062E6TA

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