ZXTD09N50DE6TA

Part Number: ZXTD09N50DE6TA

SKU: 337293

Manufacturer: Diodes Incorporated

Description: Bipolar Transistors - BJT Dual 50V NPN

Rohs State: Need to verify

Data Sheet: Download Datasheets

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Availability: 14508 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	SMD/SMT
Package Shape	SOT-23-6
Transistor Polarity	NPN
Configuration	Dual
Collector- Emitter Voltage VCEO Max	50 V
Collector- Base Voltage VCBO	50 V
Emitter- Base Voltage VEBO	7 V
Collector-Emitter Saturation Voltage	160 mV
Maximum DC Collector Current	1 A
Power Dissipation	900 mW
Gain Bandwidth Product fT	215 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	ZXTD09
Package Style	Reel
Brand	Diodes Incorporated
Continuous Collector Current	1 A
DC Collector/Base Gain hfe Min	200 at 10 mA, 2 V, 300 at 100 mA, 2 V, 200 at 500 mA, 2 V, 75 at 1 A, 2 V, 20 at 1.5 A, 2 V
DC Current Gain hFE Max	200 at 10 mA, 2 V
Height	1.3 mm
Length	3.1 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
Material	Silicon
Width	1.8 mm
CNHTS	8541210000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.000229 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	RoHS Compliance
Mounting Type Style	SMD/SMT
Package Shape	SOT-23-6
Transistor Polarity	NPN
Configuration	Dual
Collector- Emitter Voltage VCEO Max	50 V
Collector- Base Voltage VCBO	50 V
Emitter- Base Voltage VEBO	7 V
Collector-Emitter Saturation Voltage	160 mV
Maximum DC Collector Current	1 A
Power Dissipation	900 mW
Gain Bandwidth Product fT	215 MHz
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Series	ZXTD09
Package Style	Reel
Brand	Diodes Incorporated
Continuous Collector Current	1 A
DC Collector/Base Gain hfe Min	200 at 10 mA, 2 V, 300 at 100 mA, 2 V, 200 at 500 mA, 2 V, 75 at 1 A, 2 V, 20 at 1.5 A, 2 V
DC Current Gain hFE Max	200 at 10 mA, 2 V
Height	1.3 mm
Length	3.1 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
Material	Silicon
Width	1.8 mm
CNHTS	8541210000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.000229 oz
USHTS	8541290075

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