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Bipolar Transistors - BJT
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ZXTD1M832TA
ZXTD1M832TA
Part Number:
ZXTD1M832TA
SKU:
67426
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 12V PNP 3x2 MLP
Rohs State:
Need to verify
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Availability:
20118 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
In Transition
Mounting Type Style
SMD/SMT
Package Shape
MLP-832-8
Transistor Polarity
PNP
Configuration
Dual
Collector- Emitter Voltage VCEO Max
- 12 V
Collector- Base Voltage VCBO
- 20 V
Emitter- Base Voltage VEBO
7.5 V
Collector-Emitter Saturation Voltage
- 240 mV
Maximum DC Collector Current
4.4 A
Power Dissipation
1.5 W
Gain Bandwidth Product fT
110 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Package Style
Reel
Brand
Diodes Incorporated
Continuous Collector Current
- 4 A
DC Collector/Base Gain hfe Min
300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 2.5 A, 2 V, 60 at 8 A, 2 V, 45 at 10 A, 2 V
DC Current Gain hFE Max
300
Height
1 mm
Length
3 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
3000
Product Group
Transistors
Material
Silicon
CNHTS
8541210000
CAHTS
8541210000
TARIC
8541210000
ECCN
EAR99
Width
2 mm
USHTS
8541210095
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ZXTD1M832TA
Bipolar Transistors - BJT
ZXTD1M832TA
Diodes Incorporated
Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
In Transition
Mounting Type Style
SMD/SMT
Package Shape
MLP-832-8
Transistor Polarity
PNP
Configuration
Dual
Collector- Emitter Voltage VCEO Max
- 12 V
Collector- Base Voltage VCBO
- 20 V
Emitter- Base Voltage VEBO
7.5 V
Collector-Emitter Saturation Voltage
- 240 mV
Maximum DC Collector Current
4.4 A
Power Dissipation
1.5 W
Gain Bandwidth Product fT
110 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Package Style
Reel
Brand
Diodes Incorporated
Continuous Collector Current
- 4 A
DC Collector/Base Gain hfe Min
300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 2.5 A, 2 V, 60 at 8 A, 2 V, 45 at 10 A, 2 V
DC Current Gain hFE Max
300
Height
1 mm
Length
3 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
3000
Product Group
Transistors
Material
Silicon
CNHTS
8541210000
CAHTS
8541210000
TARIC
8541210000
ECCN
EAR99
Width
2 mm
USHTS
8541210095
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