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Bipolar Transistors - BJT
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ZXTD4591AM832TA
ZXTD4591AM832TA
Part Number:
ZXTD4591AM832TA
SKU:
178470
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 40V PNP 3x2 MLP
Rohs State:
Need to verify
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Availability:
98382 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
In Transition
Mounting Type Style
SMD/SMT
Package Shape
MLP-832-8
Transistor Polarity
NPN, PNP
Configuration
Dual
Collector- Emitter Voltage VCEO Max
40 V
Collector- Base Voltage VCBO
40 V
Emitter- Base Voltage VEBO
- 5 V
Maximum DC Collector Current
2 A, 1.5 A
Power Dissipation
3000 mW
Gain Bandwidth Product fT
150 MHz
Operating Temperature(Max)
+ 150 C
Package Style
Reel
Brand
Diodes Incorporated
DC Collector/Base Gain hfe Min
300 at 1 mA, 5 V at NPN, 300 at 500 mA, 5 V at NPN, 200 at 1 A, 5 V at NPN, 35 at 2 A, 5 V at NPN, 300 at 1 mA, 5 V at PNP, 300 at 100 mA, 5 V at PNP, 250 at 500 mA, 5 V at PNP, 160 at 1 A, 5 V at PNP, 30 at 2 A, 5 V at PNP
DC Current Gain hFE Max
300
Height
1 mm
Length
3 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
3000
Product Group
Transistors
Material
Silicon
CNHTS
8541210000
CAHTS
8541210000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Width
2 mm
USHTS
8541210095
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ZXTD4591AM832TA
Bipolar Transistors - BJT
ZXTD4591AM832TA
Diodes Incorporated
Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
In Transition
Mounting Type Style
SMD/SMT
Package Shape
MLP-832-8
Transistor Polarity
NPN, PNP
Configuration
Dual
Collector- Emitter Voltage VCEO Max
40 V
Collector- Base Voltage VCBO
40 V
Emitter- Base Voltage VEBO
- 5 V
Maximum DC Collector Current
2 A, 1.5 A
Power Dissipation
3000 mW
Gain Bandwidth Product fT
150 MHz
Operating Temperature(Max)
+ 150 C
Package Style
Reel
Brand
Diodes Incorporated
DC Collector/Base Gain hfe Min
300 at 1 mA, 5 V at NPN, 300 at 500 mA, 5 V at NPN, 200 at 1 A, 5 V at NPN, 35 at 2 A, 5 V at NPN, 300 at 1 mA, 5 V at PNP, 300 at 100 mA, 5 V at PNP, 250 at 500 mA, 5 V at PNP, 160 at 1 A, 5 V at PNP, 30 at 2 A, 5 V at PNP
DC Current Gain hFE Max
300
Height
1 mm
Length
3 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
3000
Product Group
Transistors
Material
Silicon
CNHTS
8541210000
CAHTS
8541210000
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Width
2 mm
USHTS
8541210095
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