ZXTDA1M832TA

Part Number: ZXTDA1M832TA

SKU: 158402

Manufacturer: Diodes Incorporated

Description: Bipolar Transistors - BJT 15V NPN / 12V PNP

Rohs State: Need to verify

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Availability: 39835 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	In Transition
Mounting Type Style	SMD/SMT
Package Shape	MLP-832-8
Transistor Polarity	NPN, PNP
Configuration	Dual
Collector- Emitter Voltage VCEO Max	15 V, 12 V
Collector- Base Voltage VCBO	40 V, 20 V
Emitter- Base Voltage VEBO	7.5 V
Collector-Emitter Saturation Voltage	240 mV
Maximum DC Collector Current	5 A, 4.4 A
Power Dissipation	1.5 W
Gain Bandwidth Product fT	110 MHz, 120 MHz
Operating Temperature(Max)	+ 150 C
Package Style	Reel
Brand	Diodes Incorporated
Continuous Collector Current	4.5 A, - 4 A
DC Collector/Base Gain hfe Min	200 at 10 mA, 2 V at NPN, 300 at 200 mA, 2 V at NPN, 200 at 3 A, 2 V at NPN, 150 at 5 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 300 at 100 mA, 2 V at PNP, 180 at 2.5 A, 2 V at PNP, 60 at 8 A, 2 V at PNP, 45 at 10 A, 2 V at PNP
DC Current Gain hFE Max	200
Height	1 mm
Length	3 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
Material	Silicon
CNHTS	8541210000
CAHTS	8541210000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Width	2 mm
USHTS	8541210095

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	In Transition
Mounting Type Style	SMD/SMT
Package Shape	MLP-832-8
Transistor Polarity	NPN, PNP
Configuration	Dual
Collector- Emitter Voltage VCEO Max	15 V, 12 V
Collector- Base Voltage VCBO	40 V, 20 V
Emitter- Base Voltage VEBO	7.5 V
Collector-Emitter Saturation Voltage	240 mV
Maximum DC Collector Current	5 A, 4.4 A
Power Dissipation	1.5 W
Gain Bandwidth Product fT	110 MHz, 120 MHz
Operating Temperature(Max)	+ 150 C
Package Style	Reel
Brand	Diodes Incorporated
Continuous Collector Current	4.5 A, - 4 A
DC Collector/Base Gain hfe Min	200 at 10 mA, 2 V at NPN, 300 at 200 mA, 2 V at NPN, 200 at 3 A, 2 V at NPN, 150 at 5 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 300 at 100 mA, 2 V at PNP, 180 at 2.5 A, 2 V at PNP, 60 at 8 A, 2 V at PNP, 45 at 10 A, 2 V at PNP
DC Current Gain hFE Max	200
Height	1 mm
Length	3 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
Material	Silicon
CNHTS	8541210000
CAHTS	8541210000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Width	2 mm
USHTS	8541210095

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