Search
Part Number: ZXTDAM832TA
SKU: 334135
Manufacturer: Diodes Incorporated
Description: Bipolar Transistors - BJT 15V NPN 3X2 MLP
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 18672 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Diodes Incorporated ZXTDAM832TA is available at WIN SOURCE. Please review product page below for detailed information, including ZXTDAM832TA price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for ZXTDAM832TA to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category Bipolar Transistors - BJT
RoHS In Transition
Mounting Type Style SMD/SMT
Package Shape MLP-832-8
Transistor Polarity NPN
Configuration Dual
Collector- Emitter Voltage VCEO Max 15 V
Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 7.5 V
Collector-Emitter Saturation Voltage 240 mV
Maximum DC Collector Current 5 A
Power Dissipation 1.5 W
Gain Bandwidth Product fT 120 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Package Style Reel
Brand Diodes Incorporated
Continuous Collector Current 4.5 A
DC Collector/Base Gain hfe Min 200 at 10 mA, 2 V, 300 at 200 mA, 2 V, 200 at 3 A, 2 V, 150 at 5 A, 2 V
DC Current Gain hFE Max 200
Height 1 mm
Length 3 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 3000
Product Group Transistors
Material Silicon
CNHTS 8541210000
CAHTS 8541210000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Width 2 mm
USHTS 8541210095
Products specifications
Manufacturer(MFG) Diodes Incorporated
Part Category Bipolar Transistors - BJT
RoHS In Transition
Mounting Type Style SMD/SMT
Package Shape MLP-832-8
Transistor Polarity NPN
Configuration Dual
Collector- Emitter Voltage VCEO Max 15 V
Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 7.5 V
Collector-Emitter Saturation Voltage 240 mV
Maximum DC Collector Current 5 A
Power Dissipation 1.5 W
Gain Bandwidth Product fT 120 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Package Style Reel
Brand Diodes Incorporated
Continuous Collector Current 4.5 A
DC Collector/Base Gain hfe Min 200 at 10 mA, 2 V, 300 at 200 mA, 2 V, 200 at 3 A, 2 V, 150 at 5 A, 2 V
DC Current Gain hFE Max 200
Height 1 mm
Length 3 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 3000
Product Group Transistors
Material Silicon
CNHTS 8541210000
CAHTS 8541210000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Width 2 mm
USHTS 8541210095
Filters
Sort
display