ZXTDE4M832TA

Part Number: ZXTDE4M832TA

SKU: 218747

Manufacturer: Diodes Incorporated

Description: Bipolar Transistors - BJT 80V NPN / 70V PNP

Rohs State: Need to verify

Data Sheet: Download Datasheets

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Availability: 72589 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	In Transition
Mounting Type Style	SMD/SMT
Package Shape	MLP-832-8
Transistor Polarity	NPN, PNP
Configuration	Dual
Collector- Emitter Voltage VCEO Max	80 V, 70 V
Collector- Base Voltage VCBO	100 V, 70 V
Emitter- Base Voltage VEBO	7.5 V
Maximum DC Collector Current	3.5 A, 2.5 A
Power Dissipation	1.5 W
Gain Bandwidth Product fT	160 MHz, 180 MHz
Operating Temperature(Max)	+ 150 C
Package Style	Reel
Brand	Diodes Incorporated
Continuous Collector Current	3.5 A, - 2.5 A
DC Collector/Base Gain hfe Min	200
DC Current Gain hFE Max	900
Height	1 mm
Length	3 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
Material	Silicon
CNHTS	8541210000
CAHTS	8541210000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Width	2 mm
USHTS	8541210095

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Products specifications

Manufacturer(MFG)	Diodes Incorporated
Part Category	Bipolar Transistors - BJT
RoHS	In Transition
Mounting Type Style	SMD/SMT
Package Shape	MLP-832-8
Transistor Polarity	NPN, PNP
Configuration	Dual
Collector- Emitter Voltage VCEO Max	80 V, 70 V
Collector- Base Voltage VCBO	100 V, 70 V
Emitter- Base Voltage VEBO	7.5 V
Maximum DC Collector Current	3.5 A, 2.5 A
Power Dissipation	1.5 W
Gain Bandwidth Product fT	160 MHz, 180 MHz
Operating Temperature(Max)	+ 150 C
Package Style	Reel
Brand	Diodes Incorporated
Continuous Collector Current	3.5 A, - 2.5 A
DC Collector/Base Gain hfe Min	200
DC Current Gain hFE Max	900
Height	1 mm
Length	3 mm
Product Type	BJTs - Bipolar Transistors
Standard Pack Quantity	3000
Product Group	Transistors
Material	Silicon
CNHTS	8541210000
CAHTS	8541210000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Width	2 mm
USHTS	8541210095

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