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Bipolar Transistors - BJT
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ZXTN25012EZTA
ZXTN25012EZTA
Part Number:
ZXTN25012EZTA
SKU:
108035
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN 12V HIGH GAIN
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
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Availability:
79835 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-89-3
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
12 V
Collector- Base Voltage VCBO
20 V
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
200 mV
Maximum DC Collector Current
6.5 A
Power Dissipation
2.4 W
Gain Bandwidth Product fT
260 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXTN250
Package Style
Reel
Brand
Diodes Incorporated
Continuous Collector Current
6.5 A
DC Collector/Base Gain hfe Min
30 at 15 A, 2 V
DC Current Gain hFE Max
1500 at 10 mA, 2 V
Height
1.6 mm
Length
4.6 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
1000
Product Group
Transistors
Material
Silicon
Width
2.6 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.001834 oz
USHTS
8541290075
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ZXTN25012EZTA
Bipolar Transistors - BJT
ZXTN25012EZTA
Diodes Incorporated
Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-89-3
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
12 V
Collector- Base Voltage VCBO
20 V
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
200 mV
Maximum DC Collector Current
6.5 A
Power Dissipation
2.4 W
Gain Bandwidth Product fT
260 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXTN250
Package Style
Reel
Brand
Diodes Incorporated
Continuous Collector Current
6.5 A
DC Collector/Base Gain hfe Min
30 at 15 A, 2 V
DC Current Gain hFE Max
1500 at 10 mA, 2 V
Height
1.6 mm
Length
4.6 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
1000
Product Group
Transistors
Material
Silicon
Width
2.6 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.001834 oz
USHTS
8541290075
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