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Bipolar Transistors - BJT
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ZXTN25020DFLTA
ZXTN25020DFLTA
Part Number:
ZXTN25020DFLTA
SKU:
87644
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN 20V HG Tran.
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
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Availability:
15367 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-23-3
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
20 V
Collector- Base Voltage VCBO
100 V
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
245 mV
Maximum DC Collector Current
2 A
Power Dissipation
350 mW
Gain Bandwidth Product fT
215 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXTN250
Package Style
Reel
Brand
Diodes Incorporated
DC Collector/Base Gain hfe Min
300 at 10 mA, 2 V, 220 at 2 A, 2 V, 80 at 4.5 A, 2 V
DC Current Gain hFE Max
300 at 10 mA, 2 V
Height
1 mm
Length
3.05 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
3000
Product Group
Transistors
Material
Silicon
Width
1.4 mm
CNHTS
8541210000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.000282 oz
USHTS
8541210075
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ZXTN25020DFLTA
Bipolar Transistors - BJT
ZXTN25020DFLTA
Diodes Incorporated
Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-23-3
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
20 V
Collector- Base Voltage VCBO
100 V
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
245 mV
Maximum DC Collector Current
2 A
Power Dissipation
350 mW
Gain Bandwidth Product fT
215 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXTN250
Package Style
Reel
Brand
Diodes Incorporated
DC Collector/Base Gain hfe Min
300 at 10 mA, 2 V, 220 at 2 A, 2 V, 80 at 4.5 A, 2 V
DC Current Gain hFE Max
300 at 10 mA, 2 V
Height
1 mm
Length
3.05 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
3000
Product Group
Transistors
Material
Silicon
Width
1.4 mm
CNHTS
8541210000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.000282 oz
USHTS
8541210075
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