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Bipolar Transistors - BJT
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ZXTP25012EFHTA
ZXTP25012EFHTA
Part Number:
ZXTP25012EFHTA
SKU:
238573
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP 12V HIGH GAIN
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
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Availability:
21346 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-23-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 12 V
Collector- Base Voltage VCBO
- 12 V
Emitter- Base Voltage VEBO
- 7 V
Collector-Emitter Saturation Voltage
- 160 mV
Maximum DC Collector Current
- 4 A
Power Dissipation
1.81 W
Gain Bandwidth Product fT
310 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXTP250
Package Style
Reel
Brand
Diodes Incorporated
DC Collector/Base Gain hfe Min
500 at 10 mA, 2 V, 300 at 1 A, 2 V, 50 at 4 A, 2 V
DC Current Gain hFE Max
500 at 10 mA, 2 V
Height
1.02 mm
Length
3.04 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
3000
Product Group
Transistors
Material
Silicon
Width
1.4 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.000282 oz
USHTS
8541290075
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ZXTP25012EFHTA
Bipolar Transistors - BJT
ZXTP25012EFHTA
Diodes Incorporated
Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-23-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 12 V
Collector- Base Voltage VCBO
- 12 V
Emitter- Base Voltage VEBO
- 7 V
Collector-Emitter Saturation Voltage
- 160 mV
Maximum DC Collector Current
- 4 A
Power Dissipation
1.81 W
Gain Bandwidth Product fT
310 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXTP250
Package Style
Reel
Brand
Diodes Incorporated
DC Collector/Base Gain hfe Min
500 at 10 mA, 2 V, 300 at 1 A, 2 V, 50 at 4 A, 2 V
DC Current Gain hFE Max
500 at 10 mA, 2 V
Height
1.02 mm
Length
3.04 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
3000
Product Group
Transistors
Material
Silicon
Width
1.4 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.000282 oz
USHTS
8541290075
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