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Bipolar Transistors - BJT
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ZXTP25020CFFTA
ZXTP25020CFFTA
Part Number:
ZXTP25020CFFTA
SKU:
178476
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP 20V 4.5A
Rohs State:
Need to verify
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Availability:
35319 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-23F-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 20 V
Collector- Base Voltage VCBO
- 25 V
Emitter- Base Voltage VEBO
- 7 V
Collector-Emitter Saturation Voltage
- 210 mV
Maximum DC Collector Current
- 4.5 A
Power Dissipation
1.96 W
Gain Bandwidth Product fT
285 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXTP25020
Package Style
Reel
Brand
Diodes Incorporated
Continuous Collector Current
- 4.5 A
DC Collector/Base Gain hfe Min
40 at - 10 A, - 2 V
DC Current Gain hFE Max
500 at - 10 mA, - 2 V
Height
1 mm
Length
3 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
3000
Product Group
Transistors
Material
Silicon
Width
1.7 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.001721 oz
USHTS
8541290075
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ZXTP25020CFFTA
Bipolar Transistors - BJT
ZXTP25020CFFTA
Diodes Incorporated
Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-23F-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 20 V
Collector- Base Voltage VCBO
- 25 V
Emitter- Base Voltage VEBO
- 7 V
Collector-Emitter Saturation Voltage
- 210 mV
Maximum DC Collector Current
- 4.5 A
Power Dissipation
1.96 W
Gain Bandwidth Product fT
285 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXTP25020
Package Style
Reel
Brand
Diodes Incorporated
Continuous Collector Current
- 4.5 A
DC Collector/Base Gain hfe Min
40 at - 10 A, - 2 V
DC Current Gain hFE Max
500 at - 10 mA, - 2 V
Height
1 mm
Length
3 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
3000
Product Group
Transistors
Material
Silicon
Width
1.7 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.001721 oz
USHTS
8541290075
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